digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mac218(a) series silicon bidirectional thyristors available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings (t j = 25c unless otherwise noted) rating symbol value unit peak repetitive off-state voltage (1) (t j = 25 to +125c, gate open) mac218-4, mac218a-4 mac218-5, mac218a-5 mac218-6, mac218a-6 mac218-7, mac218a-7 mac218-8, mac218a-8 mac218-9, mac218a-9 mac218-10, MAC218A-10 v drm 200 300 400 500 600 700 800 volts rms on-state current (conduction angles = 360, t c = 80c) i t(rms) 8 amps peak non-repetitive surge current (1 cycle, 60 hz, t c = 80c, preceded and followed by rated current) i tsm 100 amps circuit fusing considerations (t = 8.3ms) i 2 t 40 a 2 s peak gate power (t c = 80c, pulse width = 2s) p gm 16 watts average gate power (t c = 80c, t = 8.3ms) p g(av) 0.35 watts peak gate trigger current (pulse width = 1s) i gtm 4 amps operating junction temperature range t j -40 to +125 c storage temperature range t stg -40 to +150 c note 1: v drm for all types can be applied on a continuous basis. blocking vo ltage shall not be tested with a constant current source such t hat the voltage ratings of the devices are exceeded. thermal characteristics characteristic symbol maximum unit thermal resistance, junction to case r ? jc 2.2 c/w electrical characteristics (t c = 25c unless otherwise noted) characteristic symbol min typ. max unit peak blocking current (either direction) (v d = rated v drm , gate open @ t j = 25c) (v d = rated v drm, gate open @ t j = 125c) i drm - - - - 10 2 a ma peak on-state voltage (either direction) (i tm = 11.3a peak, pulse width = 1 to 2 ms, duty cycle 2%) v tm - 1.7 2.0 volts gate trigger current (continuous dc) (v d = 12v, r l = 12 ? ) trigger mode mt2(+),g(+); mt2(+),g(-); mt2(-),g(-) mt2(-),g(+) ?a? suffix only i gt - - - - 50 75 ma gate trigger voltage (continuous dc) (main terminal voltage = 12v, r l = 100? ) mt2(+),g(+) mt2(+),g(-) mt2(-),g(-) mt2(-),g(+) ?a? suffix only (main terminal voltage= rated v drm , r l = 10k ? , t j = 125c) mt2(+), g(+); mt2(-), g(-); mt2(+), g(-) mt2(-), g(+) ?a? suffix only v gt - - - - 0.2 0.2 0.9 0.9 1.1 1.4 - - 2 2 2 2.5 - - volts sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130131
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mac218(a) series silicon bidirectional thyristors characteristic symbol min typ. max unit holding current (either direction) (v d = 24v, gate open, initiating current = 200ma) i h - - 50 ma critical rate of rise of commutating off-state voltage (v d = rated v drm , i tm = 11.3a, commutating di/dt = 4.1a/ms, gate unenergized, t c = 80c) dv/dt(c) - 5 - v/s critical rate of rise of off-state voltage (v d = rated v drm , exponential voltage rise, gate open, t j = 125c) dv/dt - 100 - v/s mechanical characteristic case to-220ab marking body painted, alpha-numeric pin out see below to-220ab inches millimeters min max min max a 0.575 0.620 14.600 15.750 b 0.380 0.405 9.650 10.290 c 0.160 0.190 4.060 4.820 d 0.025 0.035 0.640 0.890 f 0.142 0.147 3.610 3.730 g 0.095 0.105 2.410 2.670 h 0.110 0.155 2.790 3.930 j 0.014 0.022 0.360 0.560 k 0.500 0.562 12.700 14.270 l 0.045 0.055 1.140 1.390 n 0.190 0.210 4.830 5.330 q 0.100 0.120 2.540 3.040 r 0.080 0.110 2.040 2.790 s 0.045 0.055 1.140 1.390 t 0.235 0.255 5.970 6.480 u - 0.050 - 1.270 v 0.045 - 1.140 - z - 0.080 - 2.030 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130131
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mac218(a) series silicon bidirectional thyristors sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130131
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